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IRFB3256PbF

Part Number	IRFB3256PbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Oct 16, 2015
Detailed Description	Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet	IRFB3256PbF PDF File

Overview

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97727 IRFB3256PbF HEXFET® Power MOSFET D VDSS RDS(on) typ.
max.
ID (Silicon Limited) 60V 2.
7mΩ 3.
4mΩ 206A S ID (Package Limited) 75A D DS G TO-220AB G Gate Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Avalanche Characteristics dEAS Single Pulse Avalanche Energy (Thermally Limited) ÃIAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC RθCS RθJA Parameter ijJunction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient D Drain S Source Max.
206 172 75 820 300 2.
0 ± 20 3.
3 -55 to + 175 300 (1.
6mm from case) x x10lbf in (1.
1N m) 340 See Fig.
14, 15, 22a, 22b Typ.
––– 0.
50 ––– Max.
0.
50 ––– 62 Units A W W/°C V V/ns °C mJ A mJ Units °C/W www.
irf.
com 1 09/22/11 IRFB3256PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Min.
60 ––– ––– 2.
0 88 RG Internal Gate Resistance IDSS Drain-to-Source Leakage Current ––– ––– ––– IGSS Gate-to-Source Forward Leakag...

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IRFB3256PbF HEXFET Power MOSFET - International Rectifier

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