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LN4501LT1G

LRC
Part Number LN4501LT1G
Manufacturer LRC
Description Power MOSFET
Published Oct 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Power MOSFET 20 V, 3.2 A, Single N−Channel,SOT−23 ●APPLICATIONS 1) Load/Power Switch for Po...
Datasheet PDF File LN4501LT1G PDF File

LN4501LT1G
LN4501LT1G

Overview
LESHAN RADIO COMPANY, LTD.
Power MOSFET 20 V, 3.
2 A, Single N−Channel,SOT−23 ●APPLICATIONS 1) Load/Power Switch for Portables 2) Load/Power Switch for Computing 3) DC−DC Conversion ●FEATURES 1)Leading Planar Technology for Low Gate Charge / Fast Switching 2)2.
5 V Rated for Low Voltage Gate Drive 3)SOT−23 Surface Mount for Small Footprint 4) we declare that the material of product compliant with RoHS requirements and Halogen Free.
●DEVICE MARKING AND ORDERING INFORMATION Device LN4501LT1G LN4501LT3G Marking N45 N45 Shipping 3000/Tape&Reel 10000/Tape&Reel LN4501LT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain TA = 25°C Current (Note 1) Steady State TA = 85°C Steady State Power Dissipation (Note 1) Steady State Pulsed Drain Current (tp = 10 μs) Symbol VDSS VGS ID PD IDM Limits 20 ±12 3.
2 2.
4 1.
25 10 Continuous Source Current (Body Diode) IS Operating and Storage Temperature Range TJ, Tstg Maximum Temperature for Soldering Purposes TL (1/8” from case for 10 s) 1.
6 –55 to +150 260 Unit V V A A W A A °C °C ●THERMAL CHARACTERISTICS Parameter Symbol Limits Unit Junction−to−Ambient (Note 1) RθJA 100 °C/W Junction−to−Ambient (Note 2) RθJA 300 °C/W 1.
Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.
127 in sq [1 oz] including traces).
2.
Surface−mounted on FR4 board using the minimum recommended pad size.
May,2015 Rev.
A 1/4 LESHAN RADIO COMPANY, LTD.
LN4501LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Parameter Drain−to−Source Breakdown Symbol Voltage (Note 3) Drain−to−Source Breakdown V(BR)DSS Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current IDSS Min.
20 – – Gate−to−Source Leakage Current IGSS – – Typ.
Max.
Unit Conditions 24.
5 – V VGS = 0 V, ID = 250 μA 22 – mV/°C VGS = 0 V,VDS = 16 V, – 1.
5 μA TJ = 25°C VGS = 0 V,VDS = 16 V, – 10 μA TJ = 85°C – ±100 nA VDS = 0 V, VGS =...


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