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LN2312LT1G

LRC
Part Number LN2312LT1G
Manufacturer LRC
Description 20V N-Channel MOSFET
Published Oct 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)...
Datasheet PDF File LN2312LT1G PDF File

LN2312LT1G
LN2312LT1G

Overview
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free ●FEATURES 1)VDS= 20V 2)RDS(ON), Vgs@4.
5V, Ids@5.
0A = 41m Ω 3)RDS(ON), Vgs@2.
5V, Ids@4.
5A = 47m Ω LN2312LT1G 3 1 2 SOT– 23 (TO–236AB) 3D ●DEVICE MARKING AND ORDERING INFORMATION Device LN2312LT1G LN2312LT3G Marking N12 N12 Shipping 3000/Tape&Reel 10000/Tape&Reel G 1 S 2 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 3),VGS@4.
5V TA=25℃ TA=70℃ Pulsed Drain Current (Note1,2) Maximum Power Dissipation Operating and Storage Temperature Range Symbol Limits Unit VDSS 20 V VGS ±8 V 4.
9 ID A 3.
4 IDM 15 A PD 0.
75 W TJ, Tstg –55 to +150 °C ●THERMAL DATA Parameter Symbol Thermal Resistance Junction-ambient(Note 3) Rthj-a 1.
Pulse width limited b...


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