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LN9926L

LRC
Part Number LN9926L
Manufacturer LRC
Description 20V Dual N-Channel Enhancement-Mode MOSFET
Published Oct 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@4A = 28 m RDS(ON)...
Datasheet PDF File LN9926L PDF File

LN9926L
LN9926L

Overview
LESHAN RADIO COMPANY, LTD.
20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.
5V, Ids@4A = 28 m RDS(ON), Vgs@2.
5V, Ids@2A = 40 m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications we declare that the material of product compliance with RoHS requirements.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ Low drive current ▼ Surface mount package Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 LN9926L G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 D1 D2 G1 G2 S1 S2 Rating 20 ± 12 4.
6 3.
7 20 1 0.
008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max.
Value 125 Unit ℃/W 1/5 LESHAN RADIO COMPANY, LTD.
LN9926L Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=4.
5V, ID=4A VGS=2.
5V, ID=2A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time VDS=VGS, ID=250uA VDS=10V, ID=4.
6A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS=±10 V ID=4.
6A VDS=20V VGS=5V VDS=10V ID=1A RG=3.
3Ω,VGS=5V Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RD=10Ω VGS=0V...


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