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LP2307LT1G

LRC
Part Number LP2307LT1G
Manufacturer LRC
Description 16V P-Channel Enhancement-Mode MOSFET
Published Oct 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ RDS(ON...
Datasheet PDF File LP2307LT1G PDF File

LP2307LT1G
LP2307LT1G

Overview
LESHAN RADIO COMPANY, LTD.
16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.
5V, Ids@-4.
7A = 60 mΩ RDS(ON), Vgs@-2.
5V, Ids@-1.
0A = 100 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT– 23 (TO–236AB) D G S ORDERING INFORMATION Device Marking Shipping LP2307LT1G P07 3000/Tape&Reel LP2307LT3G P07 10000/Tape&Reel Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@T A=70℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -16 ±8 -4.
7 -3.
3 -20 1.
1 0.
7 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Value 110 Unit ℃/W 1/4 LESHAN RADIO COMPANY, LTD.
LP2307LT1G Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, ID=-250uA VGS=-4.
5V, ID=-4.
7A VGS=-2.
7V, ID=-3.
8A VGS=-2.
5V, ID=-1.
0A VDS=VGS, ID=-250uA VDS=-10V, ID=-4.
7A VDS=-16V, VGS=0V VGS=±8V, VDS=0V ID=-4.
7A VDS=-10V VGS=-4.
5V VDS=-10V ID=-1A RG=6Ω ,VGS=-4.
5V RD=10Ω VGS=0V VDS=-15V f=1.
0MHz -16 - - V - 48 60 mΩ - 63 90 mΩ - 65 100 mΩ -0.
6 -0.
85 -1.
4 V - 8- S - - -1 uA - - ±100 nA - 24 36 nC - 18 - nC - 2.
7 - nC - 22 35...


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