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IRFS4115-7PPbF

International Rectifier
Part Number IRFS4115-7PPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 18, 2015
Detailed Description PD -97147 IRFS4115-7PPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supp...
Datasheet PDF File IRFS4115-7PPbF PDF File

IRFS4115-7PPbF
IRFS4115-7PPbF

Overview
PD -97147 IRFS4115-7PPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D VDSS 150V RDS(on) typ.
10.
0m: max.
11.
8m: S ID 105A D S SS S S G D2Pak 7 Pin Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery e TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC RθJA Junction-to-Case jk Junction-to-Ambient (PCB Mount) ij www.
irf.
com G G ate D Drain S Source Max.
105 74 420 380 2.
5 ± 20 32 -55 to + 175 300 10lbxin (1.
1Nxm) Units A W W/°C V V/ns °C 230 See Fig.
14, 15, 22a, 22b, mJ A mJ Typ.
––– ––– Max.
0.
40 40 Units °C/W 1 11/7/08 IRFS4115-7PPbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current 150 ––– ––– 3.
0 ––– ––– IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– RG(int) Internal Gate Resistance ––– Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
gfs Forward Transconductance 93 Qg Qgs Qgd Qsync td(on) tr t...


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