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NP100N04PUK

Renesas
Part Number NP100N04PUK
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Oct 18, 2015
Detailed Description NP100N04PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0545EJ0100 Rev.1.00 Sep 23, 2011 Description The N...
Datasheet PDF File NP100N04PUK PDF File

NP100N04PUK
NP100N04PUK

Overview
NP100N04PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0545EJ0100 Rev.
1.
00 Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Super low on-state resistance RDS(on) = 2.
3 mΩ MAX.
( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP.
( VDS = 25 V ) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP100N04PUK-E1-AY ∗1 NP100N04PUK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Taping (E1 type) Taping (E2 type) Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
) Package TO-263 (MP-25ZP) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Curren...


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