DatasheetsPDF.com

KLMBG8FE3B-A001

Samsung
Part Number KLMBG8FE3B-A001
Manufacturer Samsung
Description e.MMC
Published Oct 19, 2015
Detailed Description Rev. 1.0, Oct. 2011 KLMxGxFE3B-x00x Samsung e·MMC Product family e.MMC 4.41 Specification compatibility datasheet SAMSUN...
Datasheet PDF File KLMBG8FE3B-A001 PDF File

KLMBG8FE3B-A001
KLMBG8FE3B-A001

Overview
Rev.
1.
0, Oct.
2011 KLMxGxFE3B-x00x Samsung e·MMC Product family e.
MMC 4.
41 Specification compatibility datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only.
All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics.
No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2011 Samsung Electronics Co.
, Ltd.
All rights reserved.
-1- KLMxGxFE3B-x00x datasheet Rev.
1.
0 e·MMC Revision History Revision No.
0.
0 0.
1 0.
5 1.
0 History 1.
Initial issue 1.
User Density Ratio & Part No.
of 4GB are changed in Chapter1.
0 2.
Package Dimension(11.
5mm x 13mm x 1.
0mm ) Typo is corrected.
3.
Max.
size of Boot Partition 1,2 and RPMB is changed in Table 28.
4.
Typ.
Standby Current of NAND is changed to 15uA per chip in Chapter 8.
2 1.
Engineering Sample 2.
SEC_COUNT and MAX_ENH_SIZE_MULT are changed in Chapter 6.
4 3.
Max.
Write Timeout is changed in Chapter 7.
1 4.
Wakeup Time from Sleep Mode is added in Chapter 5.
1.
6 5.
Remarks of Init, Runtime bad block and remain reserved block per bank in Smart Report Output data are changed in Chapter 5.
2.
2 1.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)