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TC58BVG1S3HTAI0

Toshiba
Part Number TC58BVG1S3HTAI0
Manufacturer Toshiba
Description 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
Published Oct 19, 2015
Detailed Description TC58BVG1S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet PDF File TC58BVG1S3HTAI0 PDF File

TC58BVG1S3HTAI0
TC58BVG1S3HTAI0

Overview
TC58BVG1S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG1S3HTAI0 is a single 3.
3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG1S3HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The TC58BVG1S3HTAI0 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.
FEATURES • Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 2008 blocks Max 2048 blocks • Power supply VCC = 2.
7V to 3.
6V • Access time Cell array to register 40 µs typ.
(Single Page Read) / 55us typ.
(Multi Page Read) Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Program Auto Block Erase 330 µs/page typ.
2.
5 ms/block typ.
• Operating current Read (25 ns cycle) Program (avg.
) Erase (avg.
) Standby 30 mA max.
30 mA max 30 mA max 50 µA max • Package TSOP I 48-P-1220-0.
50 (Weight: 0.
53 g typ.
) • 8bit ECC for each 528B...


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