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RJK60S5DPQ-E0

Part Number	RJK60S5DPQ-E0
Manufacturer	Renesas
Description	High Speed Power Switching MOSFET
Published	Oct 20, 2015
Detailed Description	RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0734EJ0200 Rev.2.00 Jan 23,...
Datasheet	RJK60S5DPQ-E0 PDF File

Overview

RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0734EJ0200 Rev.
2.
00 Jan 23, 2013 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.
150  typ.
(at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 23 ns typ.
(at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) D 4 123 G S 1.
Gate 2.
Drain 3.
Source 4.
Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy MOSFET dv/dt ruggedness Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
Limited by Tch max.
2.
STch = 25C, Tch  150C 3.
Value at Tj = 25C, VDS  480 V 4.
Value at Tc = 25C Symbol VDSS VGSS IDNote1 IDNote1 ID Note1 (pulse) IDR Note1 IDR (pulse) Note1 IAPNote2 EARNote2 dv/dt Note3 Pch Note4 ch-c Tch Tstg Ratings 600 +30, 20 20 12.
6 40 20 40 5 1.
36 150 192.
3 0.
65 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A A mJ V/ns W C/W C C R07DS0734EJ0200 Rev.
2.
00 Jan 23, 2013 Page 1 of 7 RJK60S5DPQ-E0 Preliminary Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) RDS(on Min 600 — — 3 — — Gate resistance Rg — Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery current Body-drain diode reverse recovery charge Notes: 5.
Pulse test Ciss Coss Crss td(on)...

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