DatasheetsPDF.com

IRFPS3810PbF

International Rectifier
Part Number IRFPS3810PbF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 20, 2015
Detailed Description l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit...
Datasheet PDF File IRFPS3810PbF PDF File

IRFPS3810PbF
IRFPS3810PbF

Overview
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95703 IRFPS3810PbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.
009Ω S ID = 170A† Super-247™ Absolute Maximum Ratings ID...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)