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AUIRF3710ZS

International Rectifier
Part Number AUIRF3710ZS
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 21, 2015
Detailed Description AUTOMOTIVE GRADE PD - 97470 AUIRF3710Z AUIRF3710ZS Features O Low On-Resistance O 175°C Operating Temperature O Fast S...
Datasheet PDF File AUIRF3710ZS PDF File

AUIRF3710ZS
AUIRF3710ZS

Overview
AUTOMOTIVE GRADE PD - 97470 AUIRF3710Z AUIRF3710ZS Features O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax O Lead-Free, RoHS Compliant O Automotive Qualified * Description www.
DataSheetS4pUe.
ccoifmically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ G ID = 59A S TO-220AB AUIRF3710Z D2Pak AUIRF3710ZS Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max.
Units ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation 59 A 42 240 160 W Linear Derating Factor 1.
1 W/°C VGS EAS EAS (tested) IAR EAR TJ TSTG Gate-to-Source Voltage dSingle Pulse Avalanche Energy (Thermally limited) hSingle Pulse Avalanche Energy Tested Value cAvalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range ± 20 170 200 See Fig.
12a,12b,15,16 -55 to + 175 V mJ A mJ °C Sol...


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