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D17N06

STMicroelectronics
Part Number D17N06
Manufacturer STMicroelectronics
Description STD17N06
Published Oct 23, 2015
Detailed Description STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD17N05 STD17N06 VDSS 50 V 60 V R DS( on) <...
Datasheet PDF File D17N06 PDF File

D17N06
D17N06

Overview
STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD17N05 STD17N06 VDSS 50 V 60 V R DS( on) < 0.
085 Ω < 0.
085 Ω ID 17 A 17 A s TYPICAL RDS(on) = 0.
06 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION s THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(•) Dr...


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