DatasheetsPDF.com

AOL1434A

Alpha & Omega Semiconductors
Part Number AOL1434A
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 24, 2015
Detailed Description AOL1434A N-Channel SDMOSTM POWER Transistor General Description The AOL1434A is fabricated with SDMOSTM trench technolo...
Datasheet PDF File AOL1434A PDF File

AOL1434A
AOL1434A

Overview
AOL1434A N-Channel SDMOSTM POWER Transistor General Description The AOL1434A is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.
The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
-RoHS Compliant -Halogen Free Features VDS (V) = 25V ID = 50A RDS(ON) < 5mΩ RDS(ON) <10mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.
5V) 100% UIS Tested! 100% R g Tested! UltraSO-8TM Top View S G D Bottom tab connected to drain D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain CurrentC ID IDM Continuous Drain Current A Avalanche Current C TA=25°C TA=70°C Repetitive avalanche energy L=50uH C IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±20 50 43 100 16 13 50 63 30 15 2 1.
3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14.
2 48 3.
5 Max 20 60 5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOL1434A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 25 V IDSS Zero Gate Voltage Drain Current VDS=25V, VGS=0V TJ=55°C 10 50 µA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.
2 1.
9 2.
5 V ID(ON) On state drain current VGS=10V, VDS=5V 100 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A TJ=125°C 4 6 5 8 mΩ VGS=4.
5V, ID=20A 7.
7 10 mΩ gFS Forward Transcondu...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)