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AOB470L

Alpha & Omega Semiconductors
Part Number AOB470L
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 24, 2015
Detailed Description AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary The AOT470/AOB470L uses advanced trench techn...
Datasheet PDF File AOB470L PDF File

AOB470L
AOB470L

Overview
AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary The AOT470/AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 75V 100A < 10.
5mΩ 100% UIS Tested 100% Rg Tested Top View D TO220 Bottom View D Top View TO-263 D2PAK Bottom View D D D G DS G SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
3mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G Maximum 75 ±25 100 78 200 10 8 45 300 268 134 2.
1 1.
3 -55 to 175 G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 10 45 0.
45 Max 12 60 0.
56 G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev2: Mar 2012 www.
aosmd.
com Page 1 of 6 AOT470/AOB470L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=75V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS, ID=250µA On state drain current VGS=10V, VDS=5V VGS=10V, ID=30A Static Drain-Source On-Resistance TO220 VGS=10V, ID=30A TO263 Forward Transconductance VDS=5V, ID=30A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG TJ=55°C TJ=125°C 75 2 200 2.
7 8.
3 13.
7 8 90 0.
7 1 5 1 4 10.
5 17 10.
2 1 10...


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