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MCH6421

Part Number	MCH6421
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Oct 27, 2015
Detailed Description	MCH6421 Power MOSFET 20V, 38mΩ, 5.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench te...
Datasheet	MCH6421 PDF File

Overview

MCH6421 Power MOSFET 20V, 38mΩ, 5.
5A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance.
This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features • Low On-Resistance • 1.
8V drive • High Speed Switching • ESD Diode-Protected Gate • Pb-Free and RoHS compliance • Halogen Free compliance : MCH6421-TL-W Typical Applications • Load Switch • Synchronous Boost Converter SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 5.
5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 22 A Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.
8mm) PD 1.
5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.
8mm) Symbol RθJA Value Unit 83.
3 °C/W www.
onsemi.
com VDSS 20V RDS(on) Max 38mΩ@ 4.
5V 61mΩ@ 2.
5V 99mΩ@ 1.
8V ID Max 5.
5A ELECTRICAL CONNECTION N-Channel 1, 2, 5, 6 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 4 6 : Drain PACKING TYPE : TL MARKING LOT No.
LOT No.
KV TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 July 2015 - Rev.
2 1 Publication Order Number : MCH6421/D MCH6421 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage C...

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