DatasheetsPDF.com

IXGX35N120BD1

IXYS
Part Number IXGX35N120BD1
Manufacturer IXYS
Description IGBT
Published Oct 27, 2015
Detailed Description Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 =...
Datasheet PDF File IXGX35N120BD1 PDF File

IXGX35N120BD1
IXGX35N120BD1

Overview
Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.
3 V =tfi(typ) 160 ns (D1) Symbol Test Conditions V CES VCGR V GES VGEM IC25 I C90 ICM SSOA (RBSOA) T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C T C = 90°C TC = 25°C, 1 ms V GE = 15 V, T VJ = 125°C, R G = 5 Ω Clamped inductive load P C T C = 25°C TJ TJM Tstg Maximum Lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Maximum Ratings 1200 1200 V V ±20 V ±30 V 70 A 35 A 140 A I = 90 CM @ 0.
8 VCES 350 A W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C TO-264 AA (IXGK) G CE C (TAB) PLUS 247TM (IXGX) G C E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Md Weight Mounting torque (M3) (IXGK) 1.
13/10Nm/lb.
in.
TO-264 AA 10 PLUS247TM 6 g g Features ● International standard packages JEDEC TO-264 and PLUS247TM ● Low switching losses, low V(sat) ● MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1200 2.
5 V 5V T= J 25°C TJ = 125°C 250 µA 5 mA ±100 nA TJ = 125°C 3.
3 V 2.
7 V Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies (UPS) ● Switched-mode and resonant-mode power supplies Advantages ● High power density ● Easy to mount with 1 screw, (isolated mounting screw hole) ● Spring clip or clamp assembly possible.
DS98960 (10/02) Symbol gfs C ies Coes C res Q g Qge Qgc td(on) t ri td(off) tfi Eoff t d(on) tri Eon td(off) tfi Eoff RthJC R thCK IXGK 35N120B IXGK 35N120BD1 IXGX 35N120B IXGX 35N120BD1 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)