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IXFR14N80

IXYS
Part Number IXFR14N80
Manufacturer IXYS
Description Power MOSFET
Published Oct 27, 2015
Detailed Description HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab) N-Channel Enhancement Mode High dv/dt, Low ...
Datasheet PDF File IXFR14N80 PDF File

IXFR14N80
IXFR14N80

Overview
HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab) N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family rr V = 800 DSS ID25 = 14 =RDS(on) 0.
7 V A Ω trr ≤ 250 ns Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL VISOL Weight Symbol VDSS V GS(th) IGSS IDSS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s 50/60 Hz, RMS, t = 1minute leads-to-tab Maximum Ratings 800 V 800 V ±20 V ±30 V 14 A 56 A 14 A 45 mJ 5 V/ns ISOPLUS 247...


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