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IXGH40N60B2D1

IXYS
Part Number IXGH40N60B2D1
Manufacturer IXYS
Description IGBT
Published Oct 28, 2015
Detailed Description HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet IXG...
Datasheet PDF File IXGH40N60B2D1 PDF File

IXGH40N60B2D1
IXGH40N60B2D1

Overview
HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet IXGH 40N60B2D1 IXGT 40N60B2D1 V CES IC25 VCE(sat) t fi typ = 600 V = 75 A < 1.
7 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ V GES VGEM Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC V= GE 15 V, T VJ = 125°C, R G = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C TJ T JM Tstg Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 SMD Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 40 A 200 A I = 80 CM A 300 -55 .
.
.
+150 150 -55 .
.
.
+150 300 W °C °C °C °C 1.
13/10 Nm/lb.
in.
6g 4g Symbol Test Conditions VGE(th) I CES IGES VCE(sat) IC = 250 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 30 A, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
3.
0 5.
0 V T J = 25°C TJ = 150°C TJ = 25°C 50 µA 1 mA ±100 nA 1.
7 V TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Features z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications z PFC circuits z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers © 2003 IXYS All rights reserved DS99109(10/03) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
gfs IC = 30 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 20 36 S C ies Coes C res Qg Q ge Qgc td(on) tri t d(off) tfi E off t d(on) tri E on td(off) tfi Eoff R thJC RthCK VCE = 25 V, VGE = 0 V, f = 1 MHz I = 30 A, V = 15 V, V = 300 V C GE CE Inductive load, T J = 25°C IC = 30 A, VGE = 15 ...


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