DatasheetsPDF.com

IXGX32N170H1

IXYS
Part Number IXGX32N170H1
Manufacturer IXYS
Description High Voltage IGBT
Published Oct 29, 2015
Detailed Description High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A...
Datasheet PDF File IXGX32N170H1 PDF File

IXGX32N170H1
IXGX32N170H1

Overview
High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.
3 V = 290 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 75 32 200 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 90 @ 0.
8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 350 -55 .
.
.
+150 150 -55 .
.
.
+150 W °C °C °C FC Mounting force with chip 22.
.
.
130/5.
.
.
30 N/lb Maximum lead temperature for soldering 1.
6 mm (0.
062 i...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)