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IXBH5N160G

IXYS
Part Number IXBH5N160G
Manufacturer IXYS
Description High Voltage BIMOSFET
Published Oct 29, 2015
Detailed Description High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat...
Datasheet PDF File IXBH5N160G PDF File

IXBH5N160G
IXBH5N160G

Overview
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.
7 A VCES = 1600 V VCE(sat) = 4.
9 V tf = 70 ns Preliminary data sheet C TO-220 AB (IXBP) G C E C (TAB) G TO-247 AD (IXBH) E G C C (TAB) E A = Anode, C = Cathode , TAB = Cathode IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES td(on) t r td(off) tf C ies QGon VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 5.
7 A 3.
5 A 6 0.
8VCES 68 A W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified...


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