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IXBH16N170

IXYS
Part Number IXBH16N170
Manufacturer IXYS
Description BIMOSFET Monolithic Bipolar MOS Transistor
Published Oct 29, 2015
Detailed Description High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1...
Datasheet PDF File IXBH16N170 PDF File

IXBH16N170
IXBH16N170

Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.
3V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 22Ω Clamped inductive load TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 40 A 16 A 120 A ICM = 40 VCES ≤ 1350 250 A V W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 260 1.
13/10 °C °C Nm/lb.
in.
6g 4g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VVGCEE = = 0.
8 0V • VCES IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 16A, VGE = 15V, Note 1 Characteristic Values Min.
Typ.
Max.
1700 V 3.
0 5.
5 V TJ = 125°C 50 μA 2 m...


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