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Si4686DY

Vishay
Part Number Si4686DY
Manufacturer Vishay
Description N-Channel 30-V (D-S) MOSFET
Published Oct 29, 2015
Detailed Description N-Channel 30-V (D-S) MOSFET Si4686DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0095 at VGS = 10 V 0...
Datasheet PDF File Si4686DY PDF File

Si4686DY
Si4686DY

Overview
N-Channel 30-V (D-S) MOSFET Si4686DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
0095 at VGS = 10 V 0.
014 at VGS = 4.
5 V ID (A)a 18.
2 15 Qg (Typ.
) 9.
2 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET® Technology for Low Switching Losses • TrenchFET® Power MOSFETs • 100 % Rg Tested APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server D G Top View Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free) Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single-Pulse Avalanche Current Single-Pulse Avalanche Energy L = 0.
1 mH IAS EAS TC = 25 °C Maximum Power Dissipation ...


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