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MIO1200-33E10

IXYS
Part Number MIO1200-33E10
Manufacturer IXYS
Description IGBT Module
Published Oct 30, 2015
Detailed Description MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(...
Datasheet PDF File MIO1200-33E10 PDF File

MIO1200-33E10
MIO1200-33E10

Overview
MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ.
= 3.
1 V CC C C' G E' EE E phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VCE(sat) ‘ IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 3.
1 V 3.
8 V VGE(th) IC = 240 mA; VCE = VGE 6 8V ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 120 mA 500 nA td(on) tr td(off) t f Eon Eoff Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1800 V; IC = 1200 A; RG = 1.
5 Ω; Lσ = 100 nH 400 200 1070 440 1890 1950 ns ns ns ns mJ mJ Cies Coes Cres VCE = 25 V; VGE = 0 V; f = 1 MHz Qge IC = 1200 A; VCE = 1800 V; VGE = ± 15 V RthJC ‘ Collector emitter saturation...


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