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MDI550-12A4

IXYS
Part Number MDI550-12A4
Manufacturer IXYS
Description IGBT Module
Published Oct 30, 2015
Detailed Description MID 550-12 A4 MDI 550-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA I = 670 A C25 V CES = 1200 V V =...
Datasheet PDF File MDI550-12A4 PDF File

MDI550-12A4
MDI550-12A4



Overview
MID 550-12 A4 MDI 550-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA I = 670 A C25 V CES = 1200 V V = 2.
3 V CE(sat) typ.
MID 3 MDI 3 8 19 1 3 2 1 11 10 9 8 11 10 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot IGBT TJ Tstg VISOL Md Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms  VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 1.
8 W, non repetitive VGE= ±15 V, TJ = 125°C, RG = 1.
8 W Clamped inductive load, L = 100 mH TC = 25°C 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dS dA a Weight Creepage distance on surface Strike distance through air Max.
allowable acceleration Typical Data according to a single IGBT/FRED unless otherwise stated.
 Additional current limitation by external leads Maximum Ratings 1200 1200 ±20 ±30 670 460 920 10 V V V V A A A ms ICM = 800 VCEK < VCES 2750 150 -40 .
.
.
+150 4000 4800 A W °C °C V~ V~ 2.
25-2.
75 20-25 2.
5-3.
7 22-33 14 9.
6 50 250 8.
8 Nm lb.
in.
Nm lb.
in.
mm mm m/s2 g oz.
Features q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 kHz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for easy parallelling q MOS input, voltage controlled q ultra fast free wheeling diodes q package with DCB ceramic base plate q isolation voltage 4800 V q UL registered E72873 Advantages q space and weight savings q reduced protection circuits Typical Applications q AC and DC motor control q power supplies q welding inverters 030 © 2000 IXYS All rights reserved 1-4 MID 550-12 A4 MDI 550-12 A4 Symbol V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VGE = 0 V IC = 16 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = ±20 V IC = 400 A,...



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