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EMH1307

ON Semiconductor
Part Number EMH1307
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Oct 30, 2015
Detailed Description Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET –20V, –6.5A, 26mΩ, Single EMH8 http://onsemi.com Features •...
Datasheet PDF File EMH1307 PDF File

EMH1307
EMH1307

Overview
Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET –20V, –6.
5A, 26mΩ, Single EMH8 http://onsemi.
com Features • ON-resistance RDS(on)1 : 20mΩ(typ.
) • 1.
8V drive • Protection diode in • Input Capacitance Ciss=1100pF(typ.
) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.
8mm) Ratings --20 ±10 --6.
5 --26 1.
5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7045-001 0.
2 8 5 0.
125 EMH1307-TL-H Product & Package Information • Package : EMH8 • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs.
/reel Taping Type : TL Marking 0.
05 0.
75 0.
2 1.
7 0.
2 2.
1 1 0.
5 2.
0 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain EMH8 TL Electrical Connection 876 5 JG Lot No.
12 3 4 Semiconductor Components Industries, LLC, 2013 July, 2013 62712 TKIM/O2010PE TKIM TC-00002339 No.
A1715-1/7 EMH1307 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 C...


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