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ECH8656

ON Semiconductor
Part Number ECH8656
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Oct 31, 2015
Detailed Description Ordering number : EN9010A ECH8656 N-Channel Power MOSFET 20V, 7.5A, 17mΩ, Dual ECH8 http://onsemi.com Features • ON-r...
Datasheet PDF File ECH8656 PDF File

ECH8656
ECH8656

Overview
Ordering number : EN9010A ECH8656 N-Channel Power MOSFET 20V, 7.
5A, 17mΩ, Dual ECH8 http://onsemi.
com Features • ON-resistance RDS(on)1=13mΩ (typ.
) • Halogen free compliance • Protection diode in • 1.
8V drive • Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
8mm) 1unit When mounted on ceramic substrate (900mm2×0.
8mm) Ratings 20 ±10 7.
5 40 1.
3 1.
5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-001 Top View 2.
9 85 ECH8656-TL-H 0.
15 0 to 0.
02 Product & Package Information • Package : ECH8 • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs.
/reel Packing Type : TL Marking TB Lot No.
TL 2.
8 0.
9 0.
25 2.
3 0.
25 1 0.
65 4 0.
3 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 ECH8 Electrical Connection 8765 1234 0.
07 Semiconductor Components Industries, LLC, 2013 July, 2013 80112 TKIM/83111PE TKIM TC-00002622 No.
9010-1/7 ECH8656 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diod...


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