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ECH8602M

ON Semiconductor
Part Number ECH8602M
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Feb 7, 2016
Detailed Description Ordering number : ENA1562A ECH8602M N-Channel Power MOSFET 30V, 6A, 30mΩ, Dual ECH8 http://onsemi.com Features • 2.5V...
Datasheet PDF File ECH8602M PDF File

ECH8602M
ECH8602M

Overview
Ordering number : ENA1562A ECH8602M N-Channel Power MOSFET 30V, 6A, 30mΩ, Dual ECH8 http://onsemi.
com Features • 2.
5V drive • Common-drain type • Protection diode in • Best suited for LiB charging and discharging switch • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
8mm) 1unit When mounted on ceramic substrate (900mm2×0.
8mm) Ratings 30 ±12 6 60 1.
4 1.
5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-003 Top View 2.
9 85 ECH8602M-TL-H 0.
15 0 to 0.
02 Product & Package Information • Package : ECH8 • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs.
/reel Packing Type : TL Marking TZ TL Lot No.
2.
8 0.
9 0.
25 2.
3 0.
25 1 0.
65 4 0.
3 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 Electrical Connection 8765 1234 0.
07 Semiconductor Components Industries, LLC, 2013 July, 2013 71112 TKIM/21710PE TKIM TC-00002221 No.
A1562-1/7 ECH8602M Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | y...


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