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NTMD6601NR2G

Part Number	NTMD6601NR2G
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Nov 1, 2015
Detailed Description	NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 Features •ăLow RDS(on) to Minimize Conduction Losses •ăLow...
Datasheet	NTMD6601NR2G PDF File

Overview

NTMD6601NR2G Power MOSFET 80 V, 2.
2 A, Dual N-Channel, SO-8 Features •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăDual SO-8 Surface Mount Package Saves Board Space •ăThis is a Pb-Free Device Applications •ăLCD Displays MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 5 s (Note 1) TA = 25°C TA = 70°C TA = 25°C Steady State TA = 25...

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NTMD6601NR2G Power MOSFET - ON Semiconductor

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