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NTZD5110N

ON Semiconductor
Part Number NTZD5110N
Manufacturer ON Semiconductor
Description Dual N-Channel MOSFET
Published Nov 1, 2015
Detailed Description NTZD5110N MOSFET – Dual, N-Channel with ESD Protection, Small Signal, SOT-563 60 V, 310 mA Features • Low RDS(on) Impr...
Datasheet PDF File NTZD5110N PDF File

NTZD5110N
NTZD5110N

Overview
NTZD5110N MOSFET – Dual, N-Channel with ESD Protection, Small Signal, SOT-563 60 V, 310 mA Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage • ESD Protected Gate • Small Footprint 1.
6 x 1.
6 mm • These are Pb−Free Devices Applications • Load/Power Switches • Driver Circuits: Relays, Lamps, Displays, Memories, etc.
• Battery Management/Battery Operated Systems • Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.
) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady TA = 25°C State TA = 85°C Steady State VDSS VGS ID PD 60 V ±20 V 294 mA 212 250 mW Continuous Drain Current (Note 1) Power Dissipation (Note 1) TA = 25°C ID tv5 s TA = 85°C tv5s PD 310 mA 225 280 mW Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDM TJ, TSTG IS TL 590 mA −55 to °C 150 350 mA 260 °C Gate−Source ESD Rating (HBM, Method 3015) ESD 1800 V THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 5 s (Note 1) Symbol RqJA Max 500 447 Unit °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Surface mounted on FR4 board using 1 in sq pad size (Cu.
area = 1.
127 in sq [1 oz] including traces).
http://onsemi.
com V(BR)DSS 60 RDS(on) MAX 1.
6 W @ 10 V 2.
5 W @ 4.
5 V ID Max 310 mA D1 D2 G1 G2 N−Channel S1 MOSFET S2 6 1 SOT−563 CASE 463A MARKING DIAGRAM S7MG G S7 = Specific Device Code M = Date Code (Note: Microdot may be in either location) PINOUT: SOT−563 S1 1 6 D1 G1 2 5 G2 D2 3 Top View 4 S2 ORDERING INFORMATION See detailed ordering and shipping ...


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