DatasheetsPDF.com

MMDF2P02HD

ON Semiconductor
Part Number MMDF2P02HD
Manufacturer ON Semiconductor
Description Power MOSFET
Published Nov 1, 2015
Detailed Description MMDF2P02HD Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low ...
Datasheet PDF File MMDF2P02HD PDF File

MMDF2P02HD
MMDF2P02HD

Overview
MMDF2P02HD Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time.
These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Features • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for SO−8 Package Provided • This is a Pb−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
0 MW) Gate−to−Source Voltage − Continuous Drain Drain Drain Current Current Current − − − CCSioonnngttliiennuuPoouuulssse@@(tpTT≤AA = 25°C = 100°C 10 ms) Total Power Dissipation, TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche EVL nG=eS1rg=8y5m−.
0HS,VtRadrcGt,in=IgL2=T5JW6=.
)025A°pCk,(VDD = 20 Vdc, VDSS VDGR VGS IDIIDDM PD TJ, Tstg EAS 20 20 ± 20 3.
3 2.
1 20 2.
0 − 55 to 150 324 Vdc Vdc Vdc Adc Apk W °C mJ Thermal Resistance, Junction−to−Ambient (Note 2)...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)