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RZR040P01

Rohm
Part Number RZR040P01
Manufacturer Rohm
Description 1.5V Drive Pch MOSFET
Published Nov 1, 2015
Detailed Description 1.5V Drive Pch MOSFET RZR040P01 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. 2) High power pack...
Datasheet PDF File RZR040P01 PDF File

RZR040P01
RZR040P01

Overview
1.
5V Drive Pch MOSFET RZR040P01 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance.
2) High power package.
3) Low voltage drive.
(1.
5V) zApplications Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) RZR040P01 Taping TL 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±4 ±16 −0.
8 −16 1.
0 150 −55 to +150 Unit V V A A A A W °C °C zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board.
Symbol Rth(ch-a) ∗ Limits 125 Unit °C / W zDimensions (Unit : mm) TSMT3 SOT-346T 2.
9 0.
4 (3) 1.
0MAX 0.
85 0.
7 1.
6 2.
8 0.
3~0.
6 (1) Gate (2) Source (3) Drain (1) (2) 0.
95 0.
95 1.
9 0~0.
1 0.
16 Each lead has same dimensions Abbreviated symbol : YE zInner circuit (3) ∗2 (1) ∗1 ∗1 ESD PROTECTION DIODE (2) ∗2 BODY DIODE (1) Gate (2) Source (3) Drain www.
rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
1/4 2009.
06 - Rev.
A RZR040P01 zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Typ.
Max.
Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V Gate threshold voltage VGS (th) −0.
3 − −1.
0 V VDS= −6V, ID= −1mA − 22 30 mΩ ID= −4A, VGS= −4.
5V Static drain-source on-state resistance ∗ RDS (on) − − 30 42 mΩ ID= −2A, VGS= −2.
5V 40 60 mΩ ID= −2A, VGS= −1.
8V Forward transfer admittance − 55 110 mΩ ID= −0.
8A, VGS= −1.
5V Yfs ∗ 6.
5 − − S VDS= −6V, ID= −4A Input capacitance Ciss − 2350 − pF VDS= −6V Output capacitance Coss − 310 − pF VGS=0V Reverse transfer capacitance Crss − 280 − pF f...


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