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RW1A025ZP

Rohm
Part Number RW1A025ZP
Manufacturer Rohm
Description 1.5V Drive Pch MOSFET
Published Nov 2, 2015
Detailed Description 1.5V Drive Pch MOSFET RW1A025ZP  Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High power packa...
Datasheet PDF File RW1A025ZP PDF File

RW1A025ZP
RW1A025ZP

Overview
1.
5V Drive Pch MOSFET RW1A025ZP  Structure Silicon P-channel MOSFET Features 1) Low On-resistance.
2) High power package.
3) Low voltage drive.
(1.
5v)  Application Switching  Dimensions (Unit : mm) WEMT6 (6) (5) (4) Abbreviated symbol : ZF  Packaging specifications Package Type Code Basic ordering unit (pieces) RW1A025ZP Taping T2R 8000 ○  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS 12 VGSS 10 ID 2.
5 IDP *1 IS 10 0.
5 ISP *1 10 PD *2 0.
7 Tch 150 Tstg 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board.
Symbol Rth (ch-a)* Limits 179 Unit C / W www.
rohm.
com ©2010 ROHM Co.
, Ltd.
All rights reserved.
Downloaded from Elcodis.
com electronic components distributor 1/5 2010.
07 - Rev.
A RW1A025ZP  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min.
- -12 - -0.
3 - 3.
3 - 　 Typ.
42 58 80 110 - 1500 150 120 12 28 100 38 12 2.
4 1.
4 Max.
10 -1 -1.
0 58 81 120 220 - Unit Conditions A VGS=±10V, VDS=0V V ID=1mA, VGS=0V A VDS=12V, VGS=0V V VDS=6V, ID=1mA ID=2.
5A, VGS=4.
5V m ...


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