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K3396

Panasonic Semiconductor
Part Number K3396
Manufacturer Panasonic Semiconductor
Description 2SK3396
Published Nov 2, 2015
Detailed Description Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET For impedance conversion in low frequency Fo...
Datasheet PDF File K3396 PDF File

K3396
K3396


Overview
Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor ■ Features • Low gate-source cutoff current IGSS • Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Power dissipation Channel temperature Storage temperature VGDO VGSO IG ID PD Tch Tstg −40 −40 10 1 100 125 −55 to +125 Unit V V mA mA mW °C °C 0.
33+–00.
.
0025 3 0.
23+–00.
.
0025 12 (0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05 5° 0.
15 min.
0.
80±0.
05 1.
20±0.
05 5° Unit: mm 0.
10+–00.
.
0025 0.
15 min.
0 to 0.
01 0.
52±0.
03 0.
15 max.
1: Source 2: Drain 3: Gate SSSMini3-F1 Package Marking Symbol: EB ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage Drain-source cutoff current Gate-source cutoff current Forward transfer admittance Gate-source cutoff voltage Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) VGDS IDSS IGSS Yfs VGSC Ciss Coss Crss IG = −10 µA, VDS = 0 VDS = 10 V, VGS = 0 VGS = −20 V, VDS = 0 VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, ID = 1 µA VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz −40 30 200 − 0.
5 0.
05 −1.
3 −3.
0 1.
0 V µA nA mS V pF 0.
4 pF 0.
4 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003 SJF00036AED 1 Power dissipation PD (mW) 2SK3396 PD  Ta 120 100 80 60 40 20 0 0 40 80 120 Ambient temperature Ta (°C) Drain current ID (mA) ID  VDS 0.
14 Ta = 25°C 0.
12 VGS = 2.
5 V 0.
10 2.
4 V 0.
08 2.
3 V 2.
2 V ...


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