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RSQ015N06

Rohm
Part Number RSQ015N06
Manufacturer Rohm
Description Nch 60V 1.5A Power MOSFET
Published Nov 3, 2015
Detailed Description RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 60V 290mW 1.5A 1.25W lFeatures 1) Low on - r...
Datasheet PDF File RSQ015N06 PDF File

RSQ015N06
RSQ015N06

Overview
RSQ015N06 Nch 60V 1.
5A Power MOSFET Datasheet VDSS RDS(on) (Max.
) ID PD 60V 290mW 1.
5A 1.
25W lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline TSMT6 (6) (5) (4) (1) (2) (3) lInner circuit (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 3,000 TR PX Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value 60 1.
5 6 20 1.
25 0.
6 150 -55 to +150 Unit V A A V W W °C °C www.
rohm.
com © 2012 ROHM Co.
, Ltd.
All rights reserved.
1/11 2012.
06 - Rev.
B RSQ015N06 lThermal resistance Parameter Thermal resistance, junction - ambient Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min.
Typ.
Max.
Unit - - 100 °C/W - - 208 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Values Min.
Typ.
Max.
Unit 60 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID = 1mA ΔTj referenced to 25°C Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS IGSS VGS (th) VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = 10V, ID = 1mA Gate threshold voltage temperature coefficient ΔV(GS)th ID = 1mA ΔTj referenced to 25°C Static drain - source on - state resistance Gate input resistannce Transconductance VGS=10V, ID=1.
5A RDS(on) *5 VGS=4.
5V, ID=1.
5A VGS=4V, ID=1.
5A VGS=10V, ID=1.
5A, Tj=125°C RG gfs *5 f = 1MHz, open drain VDS = 10V, ID = 1.
5A *1 Limited only by maximum temperature all...


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