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R6006AND

Rohm
Part Number R6006AND
Manufacturer Rohm
Description Nch 600V 6A Power MOSFET
Published Nov 3, 2015
Detailed Description R6006AND Nch 600V 6A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 1.2W 6A 40W lOutline CPT3 (SC-63) (SOT-42...
Datasheet PDF File R6006AND PDF File

R6006AND
R6006AND


Overview
R6006AND Nch 600V 6A Power MOSFET Datasheet VDSS RDS(on) (Max.
) ID PD 600V 1.
2W 6A 40W lOutline CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures 1) Low on-resistance.
lInner circuit 2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
5) Parallel use is easy.
*1 BODY DIODE 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 16 2,500 TL Marking R6006A lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 600 6 2.
9 24 30 2.
4 1.
9 3 40 150 -55 to +150 15 V A A A V mJ mJ A W °C °C V/ns www.
rohm.
com © 2013 ROHM Co.
, Ltd.
All rights reserved.
1/13 2013.
04 - Rev.
B R6006AND lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V, ID = 6A Tj = 125°C Values Unit 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol RthJC RthJA Tsold Values Min.
Typ.
Max.
Unit - - 3.
13 °C/W - - 100 °C/W - - 265 °C lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Values Min.
Typ.
Max.
Unit 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 3A - 700 - V Zero gate voltage drain current VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C - 0.
1 100 mA - 1000 Gate - Source leaka...



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