DatasheetsPDF.com

R5011FNX

Rohm
Part Number R5011FNX
Manufacturer Rohm
Description Nch 500V 11A Power MOSFET
Published Nov 3, 2015
Detailed Description R5011FNX Nch 500V 11A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 500V 0.52W 11A 50W lOutline TO-220FM (1)(2)(...
Datasheet PDF File R5011FNX PDF File

R5011FNX
R5011FNX

Overview
R5011FNX Nch 500V 11A Power MOSFET Datasheet VDSS RDS(on) (Max.
) ID PD 500V 0.
52W 11A 50W lOutline TO-220FM (1)(2)(3) lFeatures 1) Fast reverse recovery time (trr).
lInner circuit 2) Low on-resistance.
3) Fast switching speed.
(1) Gate (2) Drain (3) Source 4) Gate-source voltage (VGSS) guaranteed to be 30V.
5) Drive circuits can be simple.
*1 Body Diode 6) Parallel use is easy.
7) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 500 - Marking R5011FNX lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 Value 500 11 5.
4 44 30 8.
1 3.
5 5.
5 50 150 -55 to +150 15 Unit V A A A V mJ mJ A W °C °C V/ns www.
rohm.
com © 2012 ROHM Co.
, Ltd.
All rights reserved.
1/13 2012.
07 - Rev.
B R5011FNX lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 400V, ID = 11A Tj = 125°C Values 50 Unit V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol RthJC RthJA Tsold Values Min.
Typ.
Max.
Unit - - 2.
5 °C/W - - 70 °C/W - - 265 °C lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Values Min.
Typ.
Max.
Unit 500 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 11A - 580 - V Zero gate voltage drain current VDS = 500V, VGS = 0V IDSS Tj = 25°C Tj = 125°C - mA 1 100 - 10 mA Gate - Source ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)