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UM6J1N

Rohm
Part Number UM6J1N
Manufacturer Rohm
Description 4V Drive Pch MOSFET
Published Nov 4, 2015
Detailed Description 4V Drive Pch MOSFET UM6J1N zStructure Silicon P-channel MOSFET zFeatures 1) Two RSU002P03 transistors in a single UMT p...
Datasheet PDF File UM6J1N PDF File

UM6J1N
UM6J1N

Overview
4V Drive Pch MOSFET UM6J1N zStructure Silicon P-channel MOSFET zFeatures 1) Two RSU002P03 transistors in a single UMT package.
2) The MOSFET elements are independent, eliminating mutual interference.
3) Mounting cost and area can be cut in half.
zApplications Switching zDimensions (Unit : mm) UMT6 SOT-363 2.
0 1.
3 0.
65 0.
65 (5) (6) (4) 0.
9 0.
7 1.
25 2.
1 0.
1Min.
1pin mark (1) (3) (2) 0.
2 0.
15 Each lead has same dimensions Abbreviated symbol : J01 zPackaging specifications Type UM6J1N Package Code Basic ordering unit (pieces) Taping TN 3000 zInner circuit (6) (5) (4) ∗1 ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) > Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 Total power dissipation PD ∗2 Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Tch Tstg Limits −30 ±20 ±0.
2 ±0.
4 150 120 150 −55 to +150 Unit V V A A mW / TOTAL mW / ELEMENT °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 1042 Unit °C/W / TOTAL °C/W / ELEMENT www.
rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
1/3 2009.
04 - Rev.
A UM6J1N zElectrical characteristics (Ta=25°C) > Parameter Symbol Min.
Typ.
Max.
Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V Gate threshold voltage VGS (th) −1.
0 − −2.
5 V VDS= −10V, ID= −1mA Static drain-source on-state resistance RDS ∗ (on) − − 0.
9 1.
4 1.
4 2.
1 − 1.
6 2.
4 Forward transfer admittance Yfs ∗ 0.
2 − − Ω ID= −0.
2A, VGS= −1...


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