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VIPer0P

STMicroelectronics
Part Number VIPer0P
Manufacturer STMicroelectronics
Description Zero-power off-line high voltage converter
Published Nov 4, 2015
Detailed Description VIPer0P Datasheet Zero-power off-line high voltage converter SO16 narrow Product status link VIPer0P Features • Smart ...
Datasheet PDF File VIPer0P PDF File

VIPer0P
VIPer0P

Overview
VIPer0P Datasheet Zero-power off-line high voltage converter SO16 narrow Product status link VIPer0P Features • Smart stand-by architecture using the zero-power mode (ZPM) • ZPM management by MCU easily realizable • 800 V avalanche-rugged power MOSFET allowing ultra wide VAC input range to be covered • Embedded HV startup and sense-FET • Current mode PWM controller • Drain current limit protection (OCP) • Wide supply voltage range: 4.
5 V to 30 V • Self-supply option allows to remove the auxiliary winding or bias components • Minimized system input power consumption: – Less than 4 mW @ 230 VAC in ZPM – Less than 10 mW @ 230 VAC in no-load condition – Less than 400 mW @ 230 VAC with 250 mW load • Jittered switching frequency reduces the EMI filter cost – 60 kHz ± 7% (type L) – 120 kHz ± 7% (type H) • Embedded E/A with 1.
2 V reference and separate ground for easy negative voltage setting • Protections with automatic restart: overload/short circuit (OLP), max.
duty cycle counter, VCC clamp • Pulse-skip protection to prevent flux-runaway • Embedded thermal shutdown • Built in soft start for improved system reliability Applications • SMPS for home appliances, home automation, industrial, lighting and consumers Figure 1.
Basic application schematic ~ AC Din Rin Cin Ccl Rcl T Dout Tactile switch MCU ON OFF COMP VCC VIPER0P DRAIN FB EAGND SGND PGND C1 Cs Cout Vout GND R1 R2 DS11301 - Rev 3 - October 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com VIPer0P Description 1 Description The device is a high-voltage converter that smartly integrates an 800 V avalanche rugged power MOSFET with PWM current-mode control.
The power MOSFET with 800 V breakdown voltage allows extended input voltage range to be applied, as well as to reduce the size of the DRAIN snubber circuit.
This IC is capable of meeting the most stringent energy-saving standards as it has very low consumption and operates in pulse frequency modulation ...


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