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RSD050N10

Rohm
Part Number RSD050N10
Manufacturer Rohm
Description 4V Drive Nch MOSFET
Published Nov 4, 2015
Detailed Description 4V Drive Nch MOSFET RSD050N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching spee...
Datasheet PDF File RSD050N10 PDF File

RSD050N10
RSD050N10

Overview
4V Drive Nch MOSFET RSD050N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
3) Parallel use is easy.
Applications Switching Dimensions (Unit : mm) CPT3 (SC-63) Packaging specifications Package Type Code Basic ordering unit (pieces) CPT3 TL 2500 Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 100 20 5.
0 20 5.
0 20 15 150 55 to +150 *1 Pw≦10s, Duty cycle≦1% *2 Tc=25°C Unit V V A A A A W °C °C Inner circuit ∗1 (1) Gate (2) Drain (3) Source ∗2 *1 ESD Protection Diode *2 Body Diode (1) (2) (3) Thermal resistance Parameter Channel to Case * Tc=25C Symbol Rth (ch-c) * Limits 8.
33 Unit °C / W www.
rohm.
com ©2012 ROHM Co.
, Ltd.
All rights reserved.
1/6 2012.
02 - Rev.
B RSD050N10 Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min.
- 100 - 1.
0 - 2.
5 - 　 Typ.
- 135 142 145 530 50 30 10 15 45 15 14 1.
7 3.
0 Max.
±10 10 2.
5 190 200 205 - Unit Conditions A VGS=±20V, VDS=0V V ID=1mA, VGS=0V A VDS=100V, VGS=0V V VDS=10V, ID=1mA ID=5.
0A, VGS=10V m ID=5.
0A, VGS=4.
5V ID=5.
0A, VGS=4.
0V S ID=5.
0A, VDS=10V pF VDS=25V pF VGS=0V pF f=1MHz ns ID=2.
5A, VDD 50V ns VGS=10V ns RL=20 ns RG=10 nC VDD 50V nC ID=5.
0A, nC VGS=10V Body diode c...


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