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RSD200N10

Part Number	RSD200N10
Manufacturer	Rohm
Description	4V Drive Nch MOSFET
Published	Nov 4, 2015
Detailed Description	4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching spee...
Datasheet	RSD200N10 PDF File

Overview

4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be  20V.
5) Drive circuits can be simple.
6) Parallel use is easy.
Applications Switching Dimensions (Unit : mm) CPT3 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) Packaging specifications Package Code Type Basic ordering unit (pieces) RSD200N10 Taping TL 2500 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Drain-source voltage VDSS 100 Gate-source voltage Drain current Continuous Pulsed VGSS ID IDP ∗3 ∗1 ±20 ±20 ±80 Source current (Body Diode) Continuou...

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