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NTP5864NG

ON Semiconductor
Part Number NTP5864NG
Manufacturer ON Semiconductor
Description MOSFET
Published Nov 5, 2015
Detailed Description NTP5864N Power MOSFET 60 V, 63 A, 12.4 mW Features • Low RDS(on) • High Current Capability • Avalanche Energy Specifie...
Datasheet PDF File NTP5864NG PDF File

NTP5864NG
NTP5864NG


Overview
NTP5864N Power MOSFET 60 V, 63 A, 12.
4 mW Features • Low RDS(on) • High Current Capability • Avalanche Energy Specified • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp = 10 ms) Continuous Drain Steady TC = 25°C Current − RqJC (Note 1) State TC = 100°C Power Dissipation − RqJC (Note 1) Steady TC = 25°C State TC = 100°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Ene...



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