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SH8J66

Part Number	SH8J66
Manufacturer	Rohm
Description	4V Drive Pch+Pch MOSFET
Published	Nov 5, 2015
Detailed Description	4V Drive Pch+Pch MOSFET SH8J66 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low On-r...
Datasheet	SH8J66 PDF File

Overview

4V Drive Pch+Pch MOSFET SH8J66 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Applications Switching Each lead has same dimensions Packaging specifications Package Type Code Basic ordering unit (pieces) SH8J66 Taping TB 2500 Absolute maximum ratings (Ta=25C) > Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±9 ±36 −1.
6 −36 2.
0 1.
4 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Inner circuit (8) (7) (6) (5) ∗2 ∗2 ∗1 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain www.
rohm.
com ○c 2010 ROHM Co.
, Ltd.
All rights reserved.
1/5 2010.
01 - Rev.
A SH8J66 Electrical characteristics (Ta=25C) > Parameter Symbol Min.
Typ.
Max.
Unit Conditions Gate-source leakage IGSS − − ±10 μA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V Gate threshold voltage VGS (th) −1.
0 − −2.
5 V VDS= −10V, ID= −1mA Static drain-source on-state resistance Forward transfer admittance RDS ∗ (on) Yfs ∗ − − − 11 13.
5 18.
5 17.
5 23.
6 19.
0 24.
7 −− mΩ ID= −9A, VGS= −10V mΩ ID= −4.
5A, VGS= −4.
5V mΩ ID= −4.
5A, VGS= −4.
0V S VDS= −10V, ID= −9A Input capacitance Ciss − 3000 − pF VDS= −10V Output capacitance Coss − 400 − pF VGS=0V Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source c...

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