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SFT1431

ON Semiconductor
Part Number SFT1431
Manufacturer ON Semiconductor
Description Power MOSFET
Published Nov 6, 2015
Detailed Description Ordering number : ENA1624B SFT1431 Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High S...
Datasheet PDF File SFT1431 PDF File

SFT1431
SFT1431


Overview
Ordering number : ENA1624B SFT1431 Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted Symbol RθJC RθJA Value 35 ±20 11 44 1.
0 15 150 −55 to +150 Unit V V A A W W °C °C Value 8.
33 125 Unit °C/W http://onsemi.
com Electrical Connection N-Channel 2,4 1 3 Packing Type:TL Marking T1431 TL LOT No.
4 1 2 IPAK(TP) 3 4 2 1 3 DPAK(TP-FA) Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2014 September, 2014 91014 TKIM TC-00003150/60612 TKIM/D0209PA TKIM TC-00002143 No.
A1624-1/6 Electrical Characteristics at Ta = 25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Forward Diode Voltage V(BR)DSS IDSS IGSS VGS(th) gFS RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD SFT1431 Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5.
5A I...


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