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STD16NF06T4

STMicroelectronics
Part Number STD16NF06T4
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Nov 6, 2015
Detailed Description STD16NF06 N-Channel 60V - 0.060Ω - 16A - DPAK STripFET™ II Power MOSFET General features Type STD16NF06 VDSS 60V RDS...
Datasheet PDF File STD16NF06T4 PDF File

STD16NF06T4
STD16NF06T4

Overview
STD16NF06 N-Channel 60V - 0.
060Ω - 16A - DPAK STripFET™ II Power MOSFET General features Type STD16NF06 VDSS 60V RDS(on) <0.
070Ω ID 16A ■ Typical RDS(on) = 0.
060Ω ■ Exceptional dv/dt Capability ■ 100% Avalanche Tested ■ Application Oriented Characterization Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility Applications ■ Audio Amplifiers ■ Power Tools ■ Automotive Environment 1 DPAK TO-252 3 Internal schematic diagram Order codes Part Number STD16NF06T4 January 2006 Marking D16NF06 Package TO-252 Packaging TAPE & REEL Rev 1 1/11 www.
st.
com 11 1 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS VDGR VGS ID ID IDM Note 4 PTOT Drain-source Voltage (VGS = 0V) Drain-gate Voltage (RGS = 20 kΩ) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor dv/dt EAS TJ Tstg Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Table 2.
RthJC RthJA Tl Thermal data Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose STD16NF06 Value 60 60 ± 20 16 11 64 40 0.
27 10.
5 178 -55 to 175 3.
75 100 275 Unit V V V A A A W W/°C V/ns mJ °C °C/W °C/W °C 2/11 STD16NF06 2 Electrical characteristics 2 Electrical characteristics ( TCASE = 25 °C unless otherwise specified ) Table 3.
On/off states Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS VGS(th) RDS(on) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On...


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