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STB27NM60ND

STMicroelectronics
Part Number STB27NM60ND
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Nov 8, 2015
Detailed Description STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2...
Datasheet PDF File STB27NM60ND PDF File

STB27NM60ND
STB27NM60ND

Overview
STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.
13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datasheet - production data Features TAB 3 1 D2PAK TO-247 3 2 1 Figure 1.
Internal schematic diagram $4!"  ' 3 !-V Order codes VDS@ Tjmax RDS(on) max ID STB27NM60ND STW27NM60ND 650 V 0.
16 Ω 21 A • Designed for automotive applications and AEC-Q101 qualified • The worldwide best RDS(on)*area amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications • Switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.
They are ideal for ...


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