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APT97N65B2C6

Microsemi
Part Number APT97N65B2C6
Manufacturer Microsemi
Description Super Junction MOSFET
Published Nov 9, 2015
Detailed Description COOLMOS Power Semiconductors • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy...
Datasheet PDF File APT97N65B2C6 PDF File

APT97N65B2C6
APT97N65B2C6

Overview
COOLMOS Power Semiconductors • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated APT97N65B2C6 APT97N65LC6 650V 97A 0.
041Ω Super Junction MOSFET APT97N65B2C6 T-Max® TO-264 APT97N65LC6 D Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die.
This device is made with two parallel MOSFET die.
It is intended for switch-mode operation.
It is not suitable for linear mode operation.
G S MAXIMUM RATINGS Symbol Parameter All Ratings per die: TC = 25°C unless otherwise specified.
APT97N65B2_LC6 UNIT VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR Drain-Source Voltage Continuous Drain Current @ TC = 25°C 1 (assuming Rdson max = 0.
041Ω) Continuous Drain Current @ TC = 100°C Pulsed Drain Current 2 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 2 Repetitive Avalanche Energy 3 ( Id = 13.
4A, Vdd = 50V ) 650 97 62 291 ±20 862 -55 - to 150 260 13.
4 2.
96 Volts Amps Volts Watts °C Amps EAS Single Pulse Avalanche Energy ( Id = 13.
4A, Vdd = 50V ) 1954 mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 650 RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 48.
5A) 0.
037 0.
041 IDSS Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C) 25 250 IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.
96mA) 2.
5 3 3.
5 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
UNIT Volts Ohms μA nA Volts 050-7212 Rev A 2-2011 "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG.
"COOLMOS" is a trade- mark of Infineon Technologies AG.
" Micro...


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