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APT1204R7KFLL

Microsemi
Part Number APT1204R7KFLL
Manufacturer Microsemi
Description Power MOSFET
Published Nov 9, 2015
Detailed Description APT1204R7KFLL 1200V 3.5A 4.700Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Ch...
Datasheet PDF File APT1204R7KFLL PDF File

APT1204R7KFLL
APT1204R7KFLL

Overview
APT1204R7KFLL 1200V 3.
5A 4.
700Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed and Qg.
Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure.
TO-220 GDS • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS • Increased Power Dissipation D • Easier To Drive • TO-220 Package G S All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT1204R7KFLL 1200 3.
5 14 ±30 ±40 135 1.
08 -55 to 150 300 3.
5 10 425 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 1.
75A) Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) MIN TYP MAX UNIT 1200 Volts 4.
70 Ohms 250 1000 µA ±100 nA 3 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.
microsemi.
com 050-7391 Rev B 8-2006 DYNAMIC CHARACTERISTICS Symbol Char...


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