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APT20M45BVRG

Microsemi
Part Number APT20M45BVRG
Manufacturer Microsemi
Description Power MOSFET
Published Nov 9, 2015
Detailed Description APT20M45BVR(G) 200V, 56A, 0.045Ω POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement m...
Datasheet PDF File APT20M45BVRG PDF File

APT20M45BVRG
APT20M45BVRG

Overview
APT20M45BVR(G) 200V, 56A, 0.
045Ω POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
APT20M45BVR(G) TO-247 D3 FEATURES • Faster switching • Lower Leakage • 100% Avalanche tested • Popular TO-247 Package • RoHS compliant D G S Absolute Maximum Ratings Symbol Parameter All Ratings: TC = 25°C unless otherwise specified.
Ratings Unit VDSS ID IDM VGS VGSM PD Drain Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 200 Volts 56 Amps 224 ±30 Volts ±40 300 Watts 2.
4 W/C° TJ, TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.
063" from Case for 10 Seconds Avalanche Current 1 (Repetitive and Non-Repatitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 56 30 1300 °C Amps mJ Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Min BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.
5 I )D[Cont.
] Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Collector Current (VGS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.
0mA) 200 56 2 Typ Max 0.
045 25 250 ±100 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Unit Volts Amps Ohms μA nA Volts Microsemi Website - http://www.
microsemi.
com 050-5514 Rev D 3 - 2010 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qge ...


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