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GA10JT12-263

Part Number	GA10JT12-263
Manufacturer	GeneSiC
Description	Normally - OFF Silicon Carbide Junction Transistor
Published	Nov 9, 2015
Detailed Description	Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC...
Datasheet	GA10JT12-263 PDF File

Overview

Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Package  RoHS Compliant D GA10JT12-263 VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 120 mΩ 25 A 80 D GDS G S TO-263 Applications  Down Hole Oil Drilling, Geothermal Instrumentation  Hybrid Electric Vehicles (HEV)  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC)  Induction Heating  Uninterruptible Power Supply (UPS)  Motor Drives Table of Content...

Similar Datasheet

GA10JT12-247 Normally - OFF Silicon Carbide Junction Transistor - GeneSiC
GA10JT12-263 Normally - OFF Silicon Carbide Junction Transistor - GeneSiC

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